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  Datasheet File OCR Text:
 SHINDENGEN
General Purpose Rectifiers
SIL Bridges
D25XB60
600V 25A
OUTLINE DIMENSIONS
Case : 5S
Unit : mm
"A'* FEATURES *oeSingle In-Line Package Thin
*oe High current capacity with Small Package *oe High IFSM *oe Superior Thermal Conductivity APPLICATION *oewitching power supply S *oe Home Appliances, Office Equipment *oe Factory Automation, Inverter
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -40*150*Z Operating Junction Temperature Tj 150 *Z V Maximum Reverse Voltage 600 V RM IO 50Hz sine Average Rectified Forward Current wave, R-load With heatsink25 Tc=98*Z A 50Hz sine wave, R-load Without heatsink Ta=25*Z 3.5 IFSM Peak Surge Forward Current sine wave, Non-repetitive 1cycle peak value, Tj=25 50Hz 350 A 2 It Current Squared Time2 1ms*...t*10ms*@Tj=25*Z 300 As Dielectric Strength Vdis Terminals to case, AC 1 minute 2.5 kV Mounting Torque TOR* ecommended torque : 0.5Nm*j R i 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions RatingsUnit V I =12.5A, Pulse measurement, Rating Max.1.05V Forward Voltage of per diode FF IR V=V,M Reverse Current Max.10EA R R Pulse measurement, Rating of per diode AEjcjunction to case *@*@With heatsinkMax.1.0 Thermal Resistance AEjljunction to lead *@ *@ Without heatsink *Z/W Max.5 AEja junction to ambient Without heatsink ax.22 M
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D25XBx
100
Forward Voltage
10
Forward Current IF [A]
Tc=150C [TYP]
Tc=25C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D25XBx
80 70
Forward Power Dissipation
Forward Power Dissipation PF [W]
60 50 40 30 20 10 0
SIN
0
5
10
15
20
25
30
Average Rectified Forward Current IO [A]
Tj = 150C Sine wave
D25XBx
35
Derating Curve
Heatsink Tc Tc
Average Rectified Forward Current IO [A]
30 SIN 25
20
15
10
5
0 80
90
100
110
120
130
140
150
160
Case Temperature Tc [C]
Sine wave R-load with heatsink
D25XBx
5
Derating Curve
Average Rectified Forward Current IO [A]
4 SIN
PCB Glass-epoxy substrate Soldering land 5mm
3
2
1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
Sine wave R-load Free in air
D25XBx
400
Peak Surge Forward Capability
IFSM
350
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
300
non-repetitive, sine wave, Tj=25C before surge current is applied
250
200
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]


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